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Home > english-chinese > "czochralski silicon" in Chinese

Chinese translation for "czochralski silicon"

切克劳斯基法生长硅

Related Translations:
czochralski technique:  切克劳斯基技术
czochralski method:  单晶提拉法乔克拉尔斯基法切克劳斯基法丘克拉尔斯基单晶拉制法丘克拉斯基法
czochralski crystal:  直立单晶
czochralski process:  丘克拉尔斯基拉单晶法
czochralski growth:  丘克拉斯基生长
czochralski grown ingot:  切克劳斯基法生长晶体
czochralski grown crystal:  切克劳斯基法生长晶体丘克拉斯基法生长的晶体
czochralski production system:  切克劳斯基晶体生长装置
liquid encapsulation czochralski method:  液体密封切克劳斯基法
Example Sentences:
1.Effects of germanium on oxygen precipitation in heavily boron - doped czochralski silicon
锗对重掺硼直拉硅中氧沉淀的影响
2.Fumio shimura , et al . carbon enhancement effect on oxygen precipitation in czochralski silicon [ j ] . j appl phys , 1986 , 59 : 3251
刘培东,朱爱平,张锦心等.碳和氮原子在氧沉淀中的作用[ j ] .半导体学报, 1999 , 20 : 107
3.Thus it is very important to investigate the behavior of oxygen and oxygen precipitation in heavily boron - doping czochralski silicon ( czsi ) . however , there are few papers about it , especially the effect of rtp . in this research , oxygen precipitation in heavily boron - doping czsi in different conditions have been systematically investigated
但是,相对于研究得较为深入的普通轻掺直拉硅中氧沉淀而言,国际上对直拉重掺硼硅单晶中氧沉淀的研究非常少,尤其是rtp处理过程中重掺硼硅单晶中氧沉淀的行为,目前还没有相关报道。
4.In czochralski silicon crystals ( czsi ) through fast neutron irradiation , formation and conversion of defects were investigated using fourier transform infrared spectroscopy ( ftir ) , positron annihilation technology ( pat ) and scanning electron microscope ( sem ) . the results showed that fast neutron irradiation induced large quantity of metastable defects which can be the capture centers of positron , positron annihilation average lifetime of samples increased with increasing of irradiation dosage . positron annihilation average lifetime of irradiation samples through dosage up to 1 1018 n . cm - 2 tended to constant
本文对直拉硅样品进行了不同剂量的快中子辐照,在硅中引入大量的亚稳态缺陷,研究这些亚稳态缺陷的形成,并在较宽的温度范围内对辐照样品进行了退火处理,研究退火后亚稳态缺陷的转化及同硅中氧的相互作用,应用傅立叶变换红外光谱技术( ftir ) 、正电子湮没技术( pat )和扫描电镜( sem )进行了测试。
5.Then , the effect of heavily doped boron on ig of czochralski silicon was also investigated . it is found that no dz ( denuded zones ) were observed in the hb samples subjected to high one - step temperature , ramping annealing respectively . for conventional high - low - high three - step ig annealing , the dz becomes narrower and bmd density is higher in hb samples than that in lb samples , as a result of hb enhancing oxygen precipitation
结果显示,单步高温热处理时重掺硼样品不能形成洁净区;降温退火中,降温速度较为缓慢( 3 / min )时能生成一定量的氧沉淀,但没有洁净区形成;普通高?低?高三步热处理过程中,形成明显的洁净区,但相对轻掺样品而言,洁净区较窄,氧沉淀密度明显偏高,说明重掺硼样品吸杂能力强。
Similar Words:
"czochralski grown ingot" Chinese translation, "czochralski growth" Chinese translation, "czochralski method" Chinese translation, "czochralski process" Chinese translation, "czochralski production system" Chinese translation, "czochralski technique" Chinese translation, "czochralskimethod" Chinese translation, "czochralskis reagent" Chinese translation, "czoczek" Chinese translation, "czodli" Chinese translation